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Monolayer Graphene on Si3N4 (10 mm x 10 mm) - Pack 4 units GFET Highly Flexible

SKU: 3427816273

4.3
USD200.00 USD248.00

Pay in 4 interest-free payments of $50.00 Learn more

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Ships within 48 hours · Estimated delivery Jul 24 - Jul 29

Description

Highly Flexible

· Graphene transistors and electronic applications

· Resistivity of Si substrate: 1-10 Ω

· Electrical conductivity on test structures

"Graphene Sensor Arrays for Rapid and Accurate Detection of Pancreatic Cancer Exosomes in Patients’ Blood Plasma Samples"

Monolayer Graphene on Si3N4 (10 mm x 10 mm) - Pack 4 units GFET Highly FlexibleMonolayer Graphene film on Si3N4 (10 mm x 10 mm) Processed in ISO 7 Cleanroom Monolayer Graphene produced by CVD on copper catalyst and transferred to a Si3N4 substrate using wet transfer process. This product is ideal for R&D departments and universities. Graphene Film Transparency: > 97 % Coverage: > 95% Polymer assisted transfer Thickness (theoretical): 0. 345 nm Hall Electron Mobility on Si3N4: 1432428 cm2 Vs Sheet Resistance: 576172 Ohms sq (1cm

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